IXTH60N20L2 Ixys MOSFET N-CH 200V 60A TO-247 N-Channel 200V 60A (Tc) 540W (Tc) Through Hole TO-247 (IXTH)
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| Producent | Ixys | | Part Number | IXTH60N20L2 (IXTH60N20L2) |
| Specifications | MOSFET N-CH 200V 60A TO-247 N-Channel 200V 60A (Tc) 540W (Tc) Through Hole TO-247 (IXTH) |
| Unit Price | 11,56 EUR |
| Minimum Order Quantity | 30 |
| Tariff No. | |
| Lead Time | 56 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series Linear L2™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 255nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 540W (Tc) Rds On (Max) @ Id, Vgs 45 mOhm @ 30A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |
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