IXTA60N20T Ixys MOSFET N-CH 200V 60A TO-263 N-Channel 200V 60A (Tc) 500W (Tc) Surface Mount TO-263 (IXTA)

ProducentIxys
Part Number

IXTA60N20T (IXTA60N20T)

Specifications

MOSFET N-CH 200V 60A TO-263 N-Channel 200V 60A (Tc) 500W (Tc) Surface Mount TO-263 (IXTA)

Unit Price3,50 EUR
Minimum Order Quantity50
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series Trench™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 4530pF @ 25V FET Feature - Power Dissipation (Max) 500W (Tc) Rds On (Max) @ Id, Vgs 40 mOhm @ 30A, 10V Operating Temperature - Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Datasheets
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