IXTT82N25P Ixys MOSFET N-CH 250V 82A TO-268 N-Channel 250V 82A (Tc) 500W (Tc) Surface Mount TO-268

ProducentIxys
Part Number

IXTT82N25P (IXTT82N25P)

Specifications

MOSFET N-CH 250V 82A TO-268 N-Channel 250V 82A (Tc) 500W (Tc) Surface Mount TO-268

Unit Price7,85 EUR
Minimum Order Quantity30
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series PolarHT™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 82A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 142nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 500W (Tc) Rds On (Max) @ Id, Vgs 35 mOhm @ 41A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268 Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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