IXTP1R6N50D2 Ixys MOSFET N-CH 500V 1.6A TO220AB N-Channel 500V 1.6A (Tc) 100W (Tc) Through Hole TO-220AB

ProducentIxys
Part Number

IXTP1R6N50D2 (IXTP1R6N50D2)

Specifications

MOSFET N-CH 500V 1.6A TO220AB N-Channel 500V 1.6A (Tc) 100W (Tc) Through Hole TO-220AB

Unit Price2,46 EUR
Minimum Order Quantity50
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 23.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 645pF @ 25V Vgs (Max) ±20V FET Feature Depletion Mode Power Dissipation (Max) 100W (Tc) Rds On (Max) @ Id, Vgs 2.3 Ohm @ 800mA, 0V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
Datasheets
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