IXTQ22N50P Ixys MOSFET N-CH 500V 22A TO-3P N-Channel 500V 22A (Tc) 350W (Tc) Through Hole TO-3P

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Part Number

IXTQ22N50P (IXTQ22N50P)

Specifications

MOSFET N-CH 500V 22A TO-3P N-Channel 500V 22A (Tc) 350W (Tc) Through Hole TO-3P

Unit Price3,98 EUR
Minimum Order Quantity30
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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series PolarHV™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2630pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 350W (Tc) Rds On (Max) @ Id, Vgs 270 mOhm @ 11A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3
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