IXTH30N50P Ixys MOSFET N-CH 500V 30A TO-247 N-Channel 500V 30A (Tc) 460W (Tc) Through Hole TO-247 (IXTH)

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Part Number

IXTH30N50P (IXTH30N50P)

Specifications

MOSFET N-CH 500V 30A TO-247 N-Channel 500V 30A (Tc) 460W (Tc) Through Hole TO-247 (IXTH)

Unit Price6,49 EUR
Minimum Order Quantity30
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series PolarHV™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 4150pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 460W (Tc) Rds On (Max) @ Id, Vgs 200 mOhm @ 15A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3
Datasheets
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