IXFQ34N50P3 Ixys MOSFET N-CH 500V 34A TO-3P N-Channel 500V 34A (Tc) 695W (Tc) Through Hole TO-3P

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Part Number

IXFQ34N50P3 (IXFQ34N50P3)

Specifications

MOSFET N-CH 500V 34A TO-3P N-Channel 500V 34A (Tc) 695W (Tc) Through Hole TO-3P

Unit Price5,24 EUR
Minimum Order Quantity30
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series HiPerFET™, Polar3™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3260pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 695W (Tc) Rds On (Max) @ Id, Vgs 170 mOhm @ 17A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3
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