IXFQ50N50P3 Ixys MOSFET N-CH 500V 50A TO-3P N-Channel 500V 50A (Tc) 960W (Tc) Through Hole TO-3P
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| Producent | Ixys | | Part Number | IXFQ50N50P3 (IXFQ50N50P3) |
| Specifications | MOSFET N-CH 500V 50A TO-3P N-Channel 500V 50A (Tc) 960W (Tc) Through Hole TO-3P |
| Unit Price | 6,10 EUR |
| Minimum Order Quantity | 30 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series HiPerFET™, Polar3™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 4335pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 960W (Tc) Rds On (Max) @ Id, Vgs 120 mOhm @ 25A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
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