IXTY2N60P Ixys MOSFET N-CH 600V 2A D-PAK N-Channel 600V 2A (Tc) 55W (Tc) Surface Mount TO-252, (D-Pak)

ProducentIxys
Part Number

IXTY2N60P (IXTY2N60P)

Specifications

MOSFET N-CH 600V 2A D-PAK N-Channel 600V 2A (Tc) 55W (Tc) Surface Mount TO-252, (D-Pak)

Unit Price0,91 EUR
Minimum Order Quantity70
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series Polar™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V FET Feature - Power Dissipation (Max) 55W (Tc) Rds On (Max) @ Id, Vgs 5.1 Ohm @ 1A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheets
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