IXTP2N60P Ixys MOSFET N-CH 600V 2A TO-220 N-Channel 600V 2A (Tc) 55W (Tc) Through Hole TO-220AB

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Part Number

IXTP2N60P (IXTP2N60P)

Specifications

MOSFET N-CH 600V 2A TO-220 N-Channel 600V 2A (Tc) 55W (Tc) Through Hole TO-220AB

Unit Price1,08 EUR
Minimum Order Quantity50
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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series Polar™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V FET Feature - Power Dissipation (Max) 55W (Tc) Rds On (Max) @ Id, Vgs 5.1 Ohm @ 1A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
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