IXFY4N60P3 Ixys MOSFET N-CH 600V 4A TO-252 N-Channel 600V 4A (Tc) 114W (Tc) Surface Mount TO-252

ProducentIxys
Part Number

IXFY4N60P3 (IXFY4N60P3)

Specifications

MOSFET N-CH 600V 4A TO-252 N-Channel 600V 4A (Tc) 114W (Tc) Surface Mount TO-252

Unit Price1,04 EUR
Minimum Order Quantity70
Tariff No.
Lead Time84 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series HiPerFET™, Polar3™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 365pF @ 25V FET Feature - Power Dissipation (Max) 114W (Tc) Rds On (Max) @ Id, Vgs 2.2 Ohm @ 2A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheets
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