IXTU12N06T Ixys MOSFET N-CH 60V 12A TO-251 N-Channel 60V 12A (Tc) 33W (Tc) Through Hole TO-251

ProducentIxys
Part Number

IXTU12N06T (IXTU12N06T)

Specifications

MOSFET N-CH 60V 12A TO-251 N-Channel 60V 12A (Tc) 33W (Tc) Through Hole TO-251

Unit Price1,32 EUR
Minimum Order Quantity75
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series TrenchMV™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 256pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 33W (Tc) Rds On (Max) @ Id, Vgs 85 mOhm @ 6A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251 Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Datasheets
E-shop Coming Soon

E-shop Coming Soon
E-shop Coming Soon

E-shop Coming Soon
Related Parts
© 2015 WorldHNews.com