IXTY12N06TTRL Ixys MOSFET N-CH 60V 12A TO-252 N-Channel 60V 12A (Tc) 33W (Tc) Surface Mount TO-252

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IXTY12N06TTRL (IXTY12N06TTRL)

Specifications

MOSFET N-CH 60V 12A TO-252 N-Channel 60V 12A (Tc) 33W (Tc) Surface Mount TO-252

Unit Price1,16 EUR
Minimum Order Quantity1
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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series TrenchMV™ Packaging Digi-Reel® Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 256pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 33W (Tc) Rds On (Max) @ Id, Vgs 85 mOhm @ 6A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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