IXTH34N65X2 Ixys MOSFET N-CH 650V 34A TO-247 N-Channel 650V 34A (Tc) 540W (Tc) Through Hole TO-247

ProducentIxys
Part Number

IXTH34N65X2 (IXTH34N65X2)

Specifications

MOSFET N-CH 650V 34A TO-247 N-Channel 650V 34A (Tc) 540W (Tc) Through Hole TO-247

Unit Price5,40 EUR
Minimum Order Quantity50
Tariff No.
Lead Time84 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3120pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 540W (Tc) Rds On (Max) @ Id, Vgs 105 mOhm @ 17A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3
Datasheets
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