IXTY1N80P Ixys MOSFET N-CH 800V 1A TO-252 N-Channel 800V 1A (Tc) 42W (Tc) Surface Mount TO-252, (D-Pak)

ProducentIxys
Part Number

IXTY1N80P (IXTY1N80P)

Specifications

MOSFET N-CH 800V 1A TO-252 N-Channel 800V 1A (Tc) 42W (Tc) Surface Mount TO-252, (D-Pak)

Unit Price1,30 EUR
Minimum Order Quantity70
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series Polar™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 1A (Tc) Vgs(th) (Max) @ Id 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V FET Feature - Power Dissipation (Max) 42W (Tc) Rds On (Max) @ Id, Vgs 14 Ohm @ 500mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheets
E-shop Coming Soon

E-shop Coming Soon
E-shop Coming Soon

E-shop Coming Soon
Related Parts
© 2015 WorldHNews.com