IXTP2N80P Ixys MOSFET N-CH 800V 2A TO-220 N-Channel 800V 2A (Tc) 70W (Tc) Through Hole TO-220AB

ProducentIxys
Part Number

IXTP2N80P (IXTP2N80P)

Specifications

MOSFET N-CH 800V 2A TO-220 N-Channel 800V 2A (Tc) 70W (Tc) Through Hole TO-220AB

Unit Price0,87 EUR
Minimum Order Quantity50
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series PolarHV™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Vgs(th) (Max) @ Id 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V FET Feature - Power Dissipation (Max) 70W (Tc) Rds On (Max) @ Id, Vgs 6 Ohm @ 1A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
Datasheets
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