IXFN56N90P Ixys MOSFET N-CH 900V 56A SOT-227B N-Channel 900V 56A 1000W (Tc) Chassis Mount SOT-227B

ProducentIxys
Part Number

IXFN56N90P (IXFN56N90P)

Specifications

MOSFET N-CH 900V 56A SOT-227B N-Channel 900V 56A 1000W (Tc) Chassis Mount SOT-227B

Unit Price34,93 EUR
Minimum Order Quantity10
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Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series Polar™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 56A Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 6.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs 375nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 1000W (Tc) Rds On (Max) @ Id, Vgs 135 mOhm @ 28A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
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