IXTX32P60P Ixys MOSFET P-CH 600V 32A PLUS247 P-Channel 600V 32A (Tc) 890W (Tc) Through Hole PLUS247™-3
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Producent | Ixys | Part Number | IXTX32P60P (IXTX32P60P) |
Specifications | MOSFET P-CH 600V 32A PLUS247 P-Channel 600V 32A (Tc) 890W (Tc) Through Hole PLUS247™-3 |
Unit Price | 13,34 EUR |
Minimum Order Quantity | 30 |
Tariff No. | |
Lead Time | 56 weeks |
Weight and Dimension | |
Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series PolarP™ Packaging Tube Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 196nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 11100pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 890W (Tc) Rds On (Max) @ Id, Vgs 350 mOhm @ 16A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS247™-3 Package / Case TO-247-3 |
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