IXFP6N120P Ixys MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A
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| Producent | Ixys | | Part Number | IXFP6N120P (IXFP6N120P) |
| Specifications | MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A |
| Unit Price | 6,35 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 6 weeks |
| Weight and Dimension | |
| Description | IXYS Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 6 A Vds - Drain-Source Breakdown Voltage: 1.2 kV Rds On - Drain-Source Resistance: 2.75 Ohms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 30 V Vgs th - Gate-Source Threshold Voltage: 5 V Qg - Gate Charge: 92 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 250 W Mounting Style: Through Hole Package/Case: TO-220-3 Packaging: Tube Brand: IXYS Channel Mode: Enhancement Fall Time: 14 ns Forward Transconductance - Min: 3 S Minimum Operating Temperature: - 55 C Rise Time: 11 ns Series: IXFP6N120 Factory Pack Quantity: 50 Tradename: Polar, HiPerFET Typical Turn-Off Delay Time: 60 ns |
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