IXTK210P10T Ixys MOSFET TrenchP Power MOSFETs
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| Producent | Ixys | | Part Number | IXTK210P10T (IXTK210P10T) |
| Specifications | MOSFET TrenchP Power MOSFETs |
| Unit Price | 20,17 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 5 weeks |
| Weight and Dimension | |
| Description | IXYS Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: - 210 A Vds - Drain-Source Breakdown Voltage: - 100 V Rds On - Drain-Source Resistance: 7.5 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 15 V Vgs th - Gate-Source Threshold Voltage: - 4.5 V Qg - Gate Charge: 740 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.04 kW Mounting Style: Through Hole Package/Case: TO-264-3 Packaging: Tube Brand: IXYS Channel Mode: Enhancement Fall Time: 55 ns Forward Transconductance - Min: 90 S Minimum Operating Temperature: - 55 C Rise Time: 98 ns Series: IXTK210P10 Factory Pack Quantity: 25 Tradename: TrenchP Typical Turn-Off Delay Time: 165 ns |
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