MID200-12A4 IXYS SEMICONDUCTOR IGBT MODULE, 1.2KV, 270A

ProducentIXYS SEMICONDUCTOR
Part Number

MID200-12A4 (MID20012A4)

Specifications

IGBT MODULE, 1.2KV, 270A

Unit Price115,41 EUR
Minimum Order Quantity1
Tariff No.85412900
Lead Time14 weeks
Weight and Dimension0.25 Kg
DescriptionCollector Emitter Saturation Voltage Vce(on): 2.2V Collector Emitter Voltage V(br)ceo: 1.2kV DC Collector Current: 270A MSL: - No. of Pins: 7 Operating Temperature Max: 150°C Power Dissipation Pd: 1.13kW SVHC: No SVHC (16-Jun-2014) Transistor Case Style: Module IXYS SEMICONDUCTOR-MID200-12A4-IGBT MODULE, 1.2KV, 270A;IGBT MODULE, 1.2KV, 270A; DC Collector Current:270A; Collector Emitter Saturation Voltage Vce(on):2.2V; Power Dissipation Pd:1.13kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (16-Jun-2014); Transistor Polarity:N Channel
Datasheets
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