MAGX-001214-250L00 Ma Com RF JFET Transistors 1.2-1.4GHz 50Volt 250W Pk Gain 17.8dB
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| Producent | Ma Com | | Part Number | MAGX-001214-250L00 (MAGX001214250L00) |
| Specifications | RF JFET Transistors 1.2-1.4GHz 50Volt 250W Pk Gain 17.8dB |
| Unit Price | 713,02 EUR |
| Minimum Order Quantity | 1 |
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| Description | MACOM Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Frequency: 1.2 GHz to 1.4 GHz Gain: 17.7 dB Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 175 V Vgs - Gate-Source Breakdown Voltage: - 8 V Id - Continuous Drain Current: 9.1 A Output Power: 250 W Maximum Operating Temperature: + 95 C Pd - Power Dissipation: 192 W Mounting Style: SMD/SMT Package/Case: Flange Ceramic-2 Packaging: Bulk Brand: MACOM Configuration: Common Source Forward Transconductance - Min: 5 S Minimum Operating Temperature: - 40 C Operating Temperature Range: - 40 C to + 95 C Factory Pack Quantity: 25 Vgs th - Gate-Source Threshold Voltage: - 3.1 V |
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