MAGX-001090-600L0S Ma Com RF JFET Transistors 1030-1090MHz 600W pk GaN Flangeless
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| Producent | Ma Com | | Part Number | MAGX-001090-600L0S (MAGX001090600L0S) |
| Specifications | RF JFET Transistors 1030-1090MHz 600W pk GaN Flangeless |
| Unit Price | 921,59 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 14 weeks |
| Weight and Dimension | |
| Description | MACOM Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Frequency: 1030 MHz to 1090 MHz Gain: 20.8 dB Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 175 V Vgs - Gate-Source Breakdown Voltage: - 8 V Id - Continuous Drain Current: 20.4 A Output Power: 600 W Maximum Operating Temperature: + 95 C Pd - Power Dissipation: 2.3 kW Mounting Style: SMD/SMT Package/Case: Ceramic-2 Packaging: Bulk Brand: MACOM Configuration: Common Source Forward Transconductance - Min: 12.5 S Minimum Operating Temperature: - 40 C Operating Temperature Range: - 40 C to + 95 C Vgs th - Gate-Source Threshold Voltage: - 3.1 V |
| Datasheets | |
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