MDD2N60RH MagnaChip MagnaChip MDD2N60RH N-channel MOSFET Transistor, 1.9 A, 600 V, 3-Pin DPAK
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| Producent | MagnaChip | | Part Number | MDD2N60RH (MDD2N60RH) |
| Specifications | MagnaChip MDD2N60RH N-channel MOSFET Transistor, 1.9 A, 600 V, 3-Pin DPAK |
| Unit Price | 0,29 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | CategoryHigh Speed Switching Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions6.73 x 6.22 x 2.39mm Height2.39mm Length6.73mm Maximum Continuous Drain Current1.9 A Maximum Drain Source Resistance4.5 Ω Maximum Drain Source Voltage600 V Maximum Gate Source Voltage±30 V Maximum Operating Temperature+150 °C Maximum Power Dissipation42 W Minimum Operating Temperature-55 °C Number of Elements per Chip1 Package TypeDPAK Pin Count3 Typical Gate Charge @ Vgs6.7 nC@ 10 V Typical Input Capacitance @ Vds275 pF@ 25 V Typical Turn-Off Delay Time40.4 ns Typical Turn-On Delay Time10.6 ns Width6.22mm Product Details N-Channel MOSFETs 1.6A to 1.9A MOSFETs - N-Channel The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type. |
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