MDD3N40RH MagnaChip MagnaChip MDD3N40RH N-channel MOSFET Transistor, 2 A, 400 V, 3-Pin DPAK

ProducentMagnaChip
Part Number

MDD3N40RH (MDD3N40RH)

Specifications

MagnaChip MDD3N40RH N-channel MOSFET Transistor, 2 A, 400 V, 3-Pin DPAK

Unit Price0,30 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionCategoryGeneral Purpose Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions6.73 x 6.22 x 2.39mm Height2.39mm Length6.73mm Maximum Continuous Drain Current2 A Maximum Drain Source Resistance3.4 Ω Maximum Drain Source Voltage400 V Maximum Gate Source Voltage±30 V Maximum Operating Temperature+150 °C Maximum Power Dissipation30 W Minimum Operating Temperature-55 °C Number of Elements per Chip1 Package TypeDPAK Pin Count3 Typical Gate Charge @ Vgs5.1 nC@ 10 V Typical Input Capacitance @ Vds167 pF@ 25 V Typical Turn-Off Delay Time12 ns Typical Turn-On Delay Time10 ns Width6.22mm Product Details N-Channel MOSFETs 2A to 2.4A MOSFETs - N-Channel The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.
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