MDP10N60GTH MagnaChip MagnaChip MDP10N60GTH N-channel MOSFET Transistor, 10 A, 660 V, 3-Pin TO-220
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| Producent | MagnaChip | | Part Number | MDP10N60GTH (MDP10N60GTH) |
| Specifications | MagnaChip MDP10N60GTH N-channel MOSFET Transistor, 10 A, 660 V, 3-Pin TO-220 |
| Unit Price | 0,61 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | CategoryHigh Speed Switching Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions10.67 x 4.83 x 16.51mm Height16.51mm Length10.67mm Maximum Continuous Drain Current10 A Maximum Drain Source Resistance0.7 Ω Maximum Drain Source Voltage660 V Maximum Gate Source Voltage±30 V Maximum Operating Temperature+150 °C Maximum Power Dissipation156 W Minimum Operating Temperature-55 °C Number of Elements per Chip1 Package TypeTO-220 Pin Count3 Typical Gate Charge @ Vgs32 nC@ 10 V Typical Input Capacitance @ Vds1360 pF@ 25 V Typical Turn-Off Delay Time116 ns Typical Turn-On Delay Time53 ns Width4.83mm Product Details High Voltage (HV) MOSFET High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance. MOSFET Transistors, MagnaChip |
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