MPMD100B120RH MagnaChip MagnaChip, MPMD100B120RH, IGBT Module, N-channel, Dual, 100 A max, 1200 V, 7-Pin 7DM-3
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| Producent | MagnaChip | | Part Number | MPMD100B120RH (MPMD100B120RH) |
| Specifications | MagnaChip, MPMD100B120RH, IGBT Module, N-channel, Dual, 100 A max, 1200 V, 7-Pin 7DM-3 |
| Unit Price | 102,28 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | Channel TypeN ConfigurationDual Dimensions108.5 x 62.5 x 20.5mm Height20.5mm Length108.5mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current100 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation780 W Minimum Operating Temperature-55 °C Mounting TypeScrew Package Type7DM-3 Pin Count7 Switching Speed70kHz Width62.5mm Product Details IGBT Modules, MagnaChip IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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