VP2206N3-G MICROCHIP TECHNOLOGY MOSFET P-CH 60V 640MA TO92-3 P-Channel 60V 640mA (Tj) 740mW (Tc) Through Hole TO-92-3
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| Producent | MICROCHIP TECHNOLOGY | | Part Number | VP2206N3-G (VP2206N3G) |
| Specifications | MOSFET P-CH 60V 640MA TO92-3 P-Channel 60V 640mA (Tj) 740mW (Tc) Through Hole TO-92-3 |
| Unit Price | 1,70 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 98 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Microchip Technology Series - Packaging Bulk Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 640mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Vgs(th) (Max) @ Id 3.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 740mW (Tc) Rds On (Max) @ Id, Vgs 900 mOhm @ 3.5A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) |
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