TN0110N3-G MICROCHIP TECHNOLOGY MOSFET N-CH 100V 350MA TO92-3 N-Channel 100V 350mA (Tj) 1W (Tc) Through Hole TO-92-3
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| Producent | MICROCHIP TECHNOLOGY | | Part Number | TN0110N3-G (TN0110N3G) |
| Specifications | MOSFET N-CH 100V 350MA TO92-3 N-Channel 100V 350mA (Tj) 1W (Tc) Through Hole TO-92-3 |
| Unit Price | 0,96 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 133 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Microchip Technology Series - Packaging Bulk Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 350mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2V @ 500µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1W (Tc) Rds On (Max) @ Id, Vgs 3 Ohm @ 500mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) |
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