LND150N3-G-P013 MICROCHIP TECHNOLOGY MOSFET N-CH 500V 30MA TO92-3 N-Channel 500V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3
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| Producent | MICROCHIP TECHNOLOGY | | Part Number | LND150N3-G-P013 (LND150N3GP013) |
| Specifications | MOSFET N-CH 500V 30MA TO92-3 N-Channel 500V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3 |
| Unit Price | 0,37 EUR |
| Minimum Order Quantity | 2 |
| Tariff No. | |
| Lead Time | 140 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Microchip Technology Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 30mA (Tj) Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 10pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 740mW (Ta) Rds On (Max) @ Id, Vgs 1000 Ohm @ 500µA, 0V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) |
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