APT60GA60JD60 Microsemi IGBT Modules
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| Producent | Microsemi | | Part Number | APT60GA60JD60 (APT60GA60JD60) |
| Specifications | IGBT Modules |
| Unit Price | 28,96 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 2 weeks |
| Weight and Dimension | |
| Description | Microsemi Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2 V Continuous Collector Current at 25 C: 112 A Gate-Emitter Leakage Current: 100 nA Power Dissipation: 356 W Maximum Operating Temperature: + 150 C Package/Case: SOT-227-4 Brand: Microsemi Maximum Gate Emitter Voltage: +/- 30 V Minimum Operating Temperature: - 55 C Mounting Style: Screw Tradename: POWER MOS 8, ISOTOP |
| Datasheets | |
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