APT75GP120JDQ3 Microsemi IGBT Modules

ProducentMicrosemi
Part Number

APT75GP120JDQ3 (APT75GP120JDQ3)

Specifications

IGBT Modules

Unit Price44,27 EUR
Minimum Order Quantity1
Tariff No.
Lead Time22 weeks
Weight and Dimension
DescriptionMicrosemi Product Category: IGBT Modules RoHS:  Details Product: IGBT Silicon Modules Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 3.3 V Continuous Collector Current at 25 C: 128 A Gate-Emitter Leakage Current: 100 nA Power Dissipation: 543 W Maximum Operating Temperature: + 150 C Package/Case: SOT-227-4 Brand: Microsemi Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 55 C Mounting Style: Screw Tradename: POWER MOS 7 IGBT, ISOTOP
Datasheets
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