APTGT100H60T3G Microsemi IGBT Modules

ProducentMicrosemi
Part Number

APTGT100H60T3G (APTGT100H60T3G)

Specifications

IGBT Modules

Unit Price63,24 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionMicrosemi Product Category: IGBT Modules RoHS:  Details Product: IGBT Silicon Modules Configuration: Quad Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.5 V Continuous Collector Current at 25 C: 150 A Gate-Emitter Leakage Current: 400 nA Power Dissipation: 340 W Maximum Operating Temperature: + 175 C Package/Case: SP-3 Brand: Microsemi Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw
Datasheets
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