APTGT50SK170T1G Microsemi IGBT Modules

ProducentMicrosemi
Part Number

APTGT50SK170T1G (APTGT50SK170T1G)

Specifications

IGBT Modules

Unit Price43,47 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionMicrosemi Product Category: IGBT Modules RoHS:  Details Product: IGBT Silicon Modules Configuration: Single Collector- Emitter Voltage VCEO Max: 1.7 kV Collector-Emitter Saturation Voltage: 2 V Continuous Collector Current at 25 C: 75 A Gate-Emitter Leakage Current: 400 nA Power Dissipation: 312 W Maximum Operating Temperature: + 150 C Package/Case: SP-1 Brand: Microsemi Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw
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