APT25GP120BDQ1G Microsemi IGBT Transistors
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| Producent | Microsemi | | Part Number | APT25GP120BDQ1G (APT25GP120BDQ1G) |
| Specifications | IGBT Transistors |
| Unit Price | 12,11 EUR |
| Minimum Order Quantity | 1 |
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| Description | Microsemi Product Category: IGBT Transistors RoHS: Details Configuration: Single Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 3.3 V Maximum Gate Emitter Voltage: 30 V Continuous Collector Current at 25 C: 69 A Gate-Emitter Leakage Current: 100 nA Power Dissipation: 417 W Maximum Operating Temperature: + 150 C Package/Case: TO-247-3 Brand: Microsemi Continuous Collector Current Ic Max: 69 A Minimum Operating Temperature: - 55 C Mounting Style: Through Hole |
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