APT50GN120L2DQ2G Microsemi IGBT Transistors

ProducentMicrosemi
Part Number

APT50GN120L2DQ2G (APT50GN120L2DQ2G)

Specifications

IGBT Transistors

Unit Price16,71 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionMicrosemi Product Category: IGBT Transistors RoHS:  Details Configuration: Single Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 1.7 V Maximum Gate Emitter Voltage: 30 V Continuous Collector Current at 25 C: 134 A Gate-Emitter Leakage Current: 600 nA Power Dissipation: 543 W Maximum Operating Temperature: + 150 C Package/Case: TO-264-3 Brand: Microsemi Continuous Collector Current Ic Max: 134 A Minimum Operating Temperature: - 55 C Mounting Style: Through Hole
Datasheets
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