APT75GN120JDQ3 Microsemi IGBT Transistors
| |
|
| Producent | Microsemi | | Part Number | APT75GN120JDQ3 (APT75GN120JDQ3) |
| Specifications | IGBT Transistors |
| Unit Price | 30,58 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | |
| Weight and Dimension | |
| Description | Microsemi Product Category: IGBT Transistors RoHS: Details Configuration: Single Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 1.7 V Maximum Gate Emitter Voltage: 30 V Continuous Collector Current at 25 C: 124 A Gate-Emitter Leakage Current: 600 nA Power Dissipation: 379 W Maximum Operating Temperature: + 150 C Package/Case: SOT-227-4 Brand: Microsemi Continuous Collector Current Ic Max: 124 A Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
