APT75GN60LDQ3G Microsemi IGBT Transistors

ProducentMicrosemi
Part Number

APT75GN60LDQ3G (APT75GN60LDQ3G)

Specifications

IGBT Transistors

Unit Price11,07 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionMicrosemi Product Category: IGBT Transistors RoHS:  Details Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.45 V Maximum Gate Emitter Voltage: 30 V Continuous Collector Current at 25 C: 155 A Gate-Emitter Leakage Current: 600 nA Power Dissipation: 536 W Maximum Operating Temperature: + 175 C Package/Case: TO-264-3 Brand: Microsemi Continuous Collector Current Ic Max: 155 A Minimum Operating Temperature: - 55 C Mounting Style: Through Hole
Datasheets
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