APT75GP120B2G Microsemi IGBT Transistors
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| Producent | Microsemi | | Part Number | APT75GP120B2G (APT75GP120B2G) |
| Specifications | IGBT Transistors |
| Unit Price | 26,02 EUR |
| Minimum Order Quantity | 1 |
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| Description | Microsemi Product Category: IGBT Transistors RoHS: Details Configuration: Single Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 3.3 V Maximum Gate Emitter Voltage: 30 V Continuous Collector Current at 25 C: 100 A Gate-Emitter Leakage Current: 100 nA Power Dissipation: 1.042 kW Maximum Operating Temperature: + 150 C Package/Case: T-Max-3 Brand: Microsemi Continuous Collector Current Ic Max: 100 A Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Tradename: POWER MOS 7 IGBT |
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