APT60N60BCSG Microsemi MOSFET
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| Producent | Microsemi | | Part Number | APT60N60BCSG (APT60N60BCSG) |
| Specifications | MOSFET |
| Unit Price | 19,82 EUR |
| Minimum Order Quantity | 1 |
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| Description | Microsemi Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 60 A Vds - Drain-Source Breakdown Voltage: 600 V Rds On - Drain-Source Resistance: 45 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 30 V Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 150 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 431 W Mounting Style: Through Hole Package/Case: TO-247-3 Brand: Microsemi Channel Mode: Enhancement Ciss - Input Capacitance: 7.2 nF Fall Time: 10 ns Minimum Operating Temperature: - 55 C Rise Time: 20 ns Typical Turn-Off Delay Time: 100 ns |
| Datasheets | |
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