JAN1N6625US Microsemi Corporation DIODE GEN PURP 1.1KV 1A D5A Diode Standard 1100V (1.1kV) 1A Surface Mount D-5A

ProducentMicrosemi Corporation
Part Number

JAN1N6625US (JAN1N6625US)

Specifications

DIODE GEN PURP 1.1KV 1A D5A Diode Standard 1100V (1.1kV) 1A Surface Mount D-5A

Unit Price15,82 EUR
Minimum Order Quantity1
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Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Diodes - Rectifiers - Single Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/585 Packaging Bulk Part Status Active Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1100V (1.1kV) Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.75V @ 1A Speed Fast Recovery = 200mA (Io) Reverse Recovery Time (trr) 60ns Current - Reverse Leakage @ Vr 1µA @ 1100V Capacitance @ Vr, F 10pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case SQ-MELF, A Supplier Device Package D-5A Operating Temperature - Junction -65°C ~ 150°C
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