APT75GP120B2G Microsemi Corporation IGBT 1200V 100A 1042W TMAX IGBT PT 1200V 100A 1042W Through Hole

ProducentMicrosemi Corporation
Part Number

APT75GP120B2G (APT75GP120B2G)

Specifications

IGBT 1200V 100A 1042W TMAX IGBT PT 1200V 100A 1042W Through Hole

Unit Price23,49 EUR
Minimum Order Quantity1
Tariff No.
Lead Time154 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer Microsemi Corporation Series POWER MOS 7® Packaging Tube Part Status Active IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 100A Current - Collector Pulsed (Icm) 300A Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 75A Power - Max 1042W Switching Energy 1620µJ (on), 2500µJ (off) Input Type Standard Gate Charge 320nC Td (on/off) @ 25°C 20ns/163ns Test Condition 600V, 75A, 5 Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Variant
Datasheets
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