APT22F80B Microsemi Corporation MOSFET N-CH 800V 22A TO-247 N-Channel 800V 23A (Tc) 625W (Tc) Through Hole TO-247 [B]

ProducentMicrosemi Corporation
Part Number

APT22F80B (APT22F80B)

Specifications

MOSFET N-CH 800V 22A TO-247 N-Channel 800V 23A (Tc) 625W (Tc) Through Hole TO-247 [B]

Unit Price11,65 EUR
Minimum Order Quantity1
Tariff No.
Lead Time154 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Microsemi Corporation Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 23A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 4595pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 625W (Tc) Rds On (Max) @ Id, Vgs 500 mOhm @ 12A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 [B] Package / Case TO-247-3
Datasheets
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