2N3810 Microsemi Corporation TRANS 2PNP 60V 0.05A TO-78 Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6

ProducentMicrosemi Corporation
Part Number

2N3810 (2N3810)

Specifications

TRANS 2PNP 60V 0.05A TO-78 Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6

Unit Price21,68 EUR
Minimum Order Quantity1
Tariff No.
Lead Time154 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Arrays Manufacturer Microsemi Corporation Series - Packaging Bulk Part Status Active Transistor Type 2 PNP (Dual) Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 250mV @ 100µA, 1mA Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1mA, 5V Power - Max 350mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-78-6 Metal Can Supplier Device Package TO-78-6
Datasheets
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