JAN2N2222A Microsemi Corporation TRANS NPN 50V 0.8A Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-218
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| Producent | Microsemi Corporation | | Part Number | JAN2N2222A (JAN2N2222A) |
| Specifications | TRANS NPN 50V 0.8A Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-218 |
| Unit Price | 5,76 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 126 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/255 Packaging Bulk Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA Current - Collector Cutoff (Max) 50nA DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V Power - Max 500mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-206AA, TO-18-3 Metal Can Supplier Device Package TO-218 |
| Datasheets | |
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