JAN2N2222AL Microsemi Corporation TRANS NPN 50V 0.8A Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-18 (TO-206AA)

ProducentMicrosemi Corporation
Part Number

JAN2N2222AL (JAN2N2222AL)

Specifications

TRANS NPN 50V 0.8A Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-18 (TO-206AA)

Unit Price8,18 EUR
Minimum Order Quantity1
Tariff No.
Lead Time161 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/255 Packaging Bulk Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA Current - Collector Cutoff (Max) 50nA DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V Power - Max 500mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-206AA, TO-18-3 Metal Can Supplier Device Package TO-18 (TO-206AA)
Datasheets
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