2N2219A Microsemi Corporation TRANS NPN 50V 0.8A TO-39 Bipolar (BJT) Transistor NPN 50V 800mA 800mW Through Hole TO-39

ProducentMicrosemi Corporation
Part Number

2N2219A (2N2219A)

Specifications

TRANS NPN 50V 0.8A TO-39 Bipolar (BJT) Transistor NPN 50V 800mA 800mW Through Hole TO-39

Unit Price12,04 EUR
Minimum Order Quantity1
Tariff No.
Lead Time154 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single Manufacturer Microsemi Corporation Series - Packaging Bulk Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA Current - Collector Cutoff (Max) 10nA DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V Power - Max 800mW Frequency - Transition - Operating Temperature -55°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-205AD, TO-39-3 Metal Can Supplier Device Package TO-39
Datasheets
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