JAN2N3700 Microsemi Corporation TRANS NPN 80V 1A Bipolar (BJT) Transistor NPN 80V 1A 500mW Through Hole TO-18
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| Producent | Microsemi Corporation | | Part Number | JAN2N3700 (JAN2N3700) |
| Specifications | TRANS NPN 80V 1A Bipolar (BJT) Transistor NPN 80V 1A 500mW Through Hole TO-18 |
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| Minimum Order Quantity | 1 |
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| Description | Categories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/391 Packaging Bulk Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 10nA DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA, 10V Power - Max 500mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-206AA, TO-18-3 Metal Can Supplier Device Package TO-18 |
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