JAN2N3019S Microsemi Corporation TRANS NPN 80V 1A Bipolar (BJT) Transistor NPN 80V 1A 800mW Through Hole TO-39
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| Producent | Microsemi Corporation | | Part Number | JAN2N3019S (JAN2N3019S) |
| Specifications | TRANS NPN 80V 1A Bipolar (BJT) Transistor NPN 80V 1A 800mW Through Hole TO-39 |
| Unit Price | 21,61 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 161 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/391 Packaging Bulk Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 10nA DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA, 10V Power - Max 800mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-205AD, TO-39-3 Metal Can Supplier Device Package TO-39 |
| Datasheets | |
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