JANTX2N3019 Microsemi Corporation TRANS NPN 80V 1A Bipolar (BJT) Transistor NPN 80V 1A 800mW Through Hole TO-5

ProducentMicrosemi Corporation
Part Number

JANTX2N3019 (JANTX2N3019)

Specifications

TRANS NPN 80V 1A Bipolar (BJT) Transistor NPN 80V 1A 800mW Through Hole TO-5

Unit Price21,96 EUR
Minimum Order Quantity1
Tariff No.
Lead Time161 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/391 Packaging Bulk Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA, 10V Power - Max 800mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-205AA, TO-5-3 Metal Can Supplier Device Package TO-5
Datasheets
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